Monte Carlo calculations of THz generation in wide gap semiconductors

E. Starikov; P. Shiktorov; V. Gružinskis; L. Reggiani; L. Varani; J. C. Vaissière; Jian H. Zhao

doi:10.1016/S0921-4526(01)01374-6

Monte Carlo calculations of THz generation in wide gap semiconductors

E. Starikov
, P. Shiktorov
, V. Gružinskis
, L. Reggiani
, L. Varani
, J. C. Vaissière
, Jian H. Zhao

School of Engineering, Electrical & Computer Engineering

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

Monte Carlo simulations of different nitrides such as InN,GaN, and AIN, were analyzed to study the high-frequency generation associated with the optical-phonon transit-time resonance in a constant electric field. The characteristics of the power amplification and generation showed that the gain decreased while the generated power increased on going from InN to GaN to AIN.

Original language	English (US)
Pages (from-to)	171-175
Number of pages	5
Journal	Physica B: Condensed Matter
Volume	314
Issue number	1-4
DOIs	https://doi.org/10.1016/S0921-4526(01)01374-6
State	Published - Mar 2002

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Keywords

Monte-Carlo calculations
Nitrides
Terahertz generation

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10.1016/S0921-4526(01)01374-6

Cite this

@article{e49bf4c90b0f462eb53288386675df67,

title = "Monte Carlo calculations of THz generation in wide gap semiconductors",

abstract = "Monte Carlo simulations of different nitrides such as InN,GaN, and AIN, were analyzed to study the high-frequency generation associated with the optical-phonon transit-time resonance in a constant electric field. The characteristics of the power amplification and generation showed that the gain decreased while the generated power increased on going from InN to GaN to AIN.",

keywords = "Monte-Carlo calculations, Nitrides, Terahertz generation",

author = "E. Starikov and P. Shiktorov and V. Gru{\v z}inskis and L. Reggiani and L. Varani and Vaissi{\`e}re, \{J. C.\} and Zhao, \{Jian H.\}",

note = "Funding Information: This work has been supported by the CNRS PECO CEI Cooperation franco lituanienne no. 5380, by the GALILEO project no. 02874RA and by the NATO collaborative linkage Grant PST.CLG.976340.",

year = "2002",

month = mar,

doi = "10.1016/S0921-4526(01)01374-6",

language = "English (US)",

volume = "314",

pages = "171--175",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier B.V.",

number = "1-4",

}

TY - JOUR

T1 - Monte Carlo calculations of THz generation in wide gap semiconductors

AU - Starikov, E.

AU - Shiktorov, P.

AU - Gružinskis, V.

AU - Reggiani, L.

AU - Varani, L.

AU - Vaissière, J. C.

AU - Zhao, Jian H.

N1 - Funding Information: This work has been supported by the CNRS PECO CEI Cooperation franco lituanienne no. 5380, by the GALILEO project no. 02874RA and by the NATO collaborative linkage Grant PST.CLG.976340.

PY - 2002/3

Y1 - 2002/3

N2 - Monte Carlo simulations of different nitrides such as InN,GaN, and AIN, were analyzed to study the high-frequency generation associated with the optical-phonon transit-time resonance in a constant electric field. The characteristics of the power amplification and generation showed that the gain decreased while the generated power increased on going from InN to GaN to AIN.

AB - Monte Carlo simulations of different nitrides such as InN,GaN, and AIN, were analyzed to study the high-frequency generation associated with the optical-phonon transit-time resonance in a constant electric field. The characteristics of the power amplification and generation showed that the gain decreased while the generated power increased on going from InN to GaN to AIN.

KW - Monte-Carlo calculations

KW - Nitrides

KW - Terahertz generation

UR - https://www.scopus.com/pages/publications/0036503814

UR - https://www.scopus.com/pages/publications/0036503814#tab=citedBy

U2 - 10.1016/S0921-4526(01)01374-6

DO - 10.1016/S0921-4526(01)01374-6

M3 - Article

AN - SCOPUS:0036503814

SN - 0921-4526

VL - 314

SP - 171

EP - 175

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 1-4

ER -

Monte Carlo calculations of THz generation in wide gap semiconductors

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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