High-current-density monolayer CdSe/ZnS quantum dot light-emitting devices with oxide electrodes

Edward M. Likovich; Rafael Jaramillo; Kasey J. Russell; Shriram Ramanathan; Venkatesh Narayanamurti

doi:10.1002/adma.201101782

High-current-density monolayer CdSe/ZnS quantum dot light-emitting devices with oxide electrodes

Edward M. Likovich
, Rafael Jaramillo
, Kasey J. Russell
, Shriram Ramanathan
, Venkatesh Narayanamurti

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

Films of semiconductor quantum dots (QDs) are promising for lighting technologies, but controlling how current flows through QD films remains a challenge. A new design for a QD light-emitting device that uses atomic layer deposition to fill the interstices between QDs with insulating oxide is introduced. It funnels current through the QDs themselves, thus increasing the light emission yield.

Original language	English (US)
Pages (from-to)	4521-4525
Number of pages	5
Journal	Advanced Materials
Volume	23
Issue number	39
DOIs	https://doi.org/10.1002/adma.201101782
State	Published - Oct 18 2011
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Materials Science
Mechanics of Materials
Mechanical Engineering

Keywords

atomic layer deposition
light-emitting devices
oxides
photovoltaic devices
quantum dots

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10.1002/adma.201101782

Cite this

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abstract = "Films of semiconductor quantum dots (QDs) are promising for lighting technologies, but controlling how current flows through QD films remains a challenge. A new design for a QD light-emitting device that uses atomic layer deposition to fill the interstices between QDs with insulating oxide is introduced. It funnels current through the QDs themselves, thus increasing the light emission yield.",

keywords = "atomic layer deposition, light-emitting devices, oxides, photovoltaic devices, quantum dots",

author = "Likovich, \{Edward M.\} and Rafael Jaramillo and Russell, \{Kasey J.\} and Shriram Ramanathan and Venkatesh Narayanamurti",

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doi = "10.1002/adma.201101782",

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AU - Likovich, Edward M.

AU - Jaramillo, Rafael

AU - Russell, Kasey J.

AU - Ramanathan, Shriram

AU - Narayanamurti, Venkatesh

PY - 2011/10/18

Y1 - 2011/10/18

N2 - Films of semiconductor quantum dots (QDs) are promising for lighting technologies, but controlling how current flows through QD films remains a challenge. A new design for a QD light-emitting device that uses atomic layer deposition to fill the interstices between QDs with insulating oxide is introduced. It funnels current through the QDs themselves, thus increasing the light emission yield.

AB - Films of semiconductor quantum dots (QDs) are promising for lighting technologies, but controlling how current flows through QD films remains a challenge. A new design for a QD light-emitting device that uses atomic layer deposition to fill the interstices between QDs with insulating oxide is introduced. It funnels current through the QDs themselves, thus increasing the light emission yield.

KW - atomic layer deposition

KW - light-emitting devices

KW - oxides

KW - photovoltaic devices

KW - quantum dots

UR - https://www.scopus.com/pages/publications/80054697396

UR - https://www.scopus.com/pages/publications/80054697396#tab=citedBy

U2 - 10.1002/adma.201101782

DO - 10.1002/adma.201101782

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JO - Advanced Materials

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IS - 39

ER -

High-current-density monolayer CdSe/ZnS quantum dot light-emitting devices with oxide electrodes

Abstract

All Science Journal Classification (ASJC) codes

Keywords

Access to Document

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