Chemical vapor deposition of HfO2 films on Si(100)

S. Sayan; S. Aravamudhan; B. W. Busch; W. H. Schulte; F. Cosandey; G. D. Wilk; T. Gustafsson; E. Garfunkel

doi:10.1116/1.1450584

Chemical vapor deposition of HfO₂ films on Si(100)

S. Sayan
, S. Aravamudhan
, B. W. Busch
, W. H. Schulte
, F. Cosandey
, G. D. Wilk
, T. Gustafsson
, E. Garfunkel

Research output: Contribution to journal › Article › peer-review

97 Scopus citations

Abstract

An attempt to develop an industrially straightforward gate dielectric deposition process was presented by growing HfO₂ films on Si(100) using chemical vapor deposition. Sufficient oxygen was provided by the decomposition of the hafnium-tetra-tert-butoxide Hf(C₄H₉O)₄ precursor during deposition at ∼400°C to produce a stoichiometric HfO₂ film. The results showed that the measurements using various techniques agree to within ∼ 15% present a generally consistent picture of film structure and composition.

Original language	English (US)
Pages (from-to)	507-512
Number of pages	6
Journal	Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
Volume	20
Issue number	2
DOIs	https://doi.org/10.1116/1.1450584
State	Published - Mar 2002

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1116/1.1450584

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abstract = "An attempt to develop an industrially straightforward gate dielectric deposition process was presented by growing HfO2 films on Si(100) using chemical vapor deposition. Sufficient oxygen was provided by the decomposition of the hafnium-tetra-tert-butoxide Hf(C4H9O)4 precursor during deposition at ∼400°C to produce a stoichiometric HfO2 film. The results showed that the measurements using various techniques agree to within ∼ 15\% present a generally consistent picture of film structure and composition.",

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AU - Sayan, S.

AU - Aravamudhan, S.

AU - Busch, B. W.

AU - Schulte, W. H.

AU - Cosandey, F.

AU - Wilk, G. D.

AU - Gustafsson, T.

AU - Garfunkel, E.

PY - 2002/3

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N2 - An attempt to develop an industrially straightforward gate dielectric deposition process was presented by growing HfO2 films on Si(100) using chemical vapor deposition. Sufficient oxygen was provided by the decomposition of the hafnium-tetra-tert-butoxide Hf(C4H9O)4 precursor during deposition at ∼400°C to produce a stoichiometric HfO2 film. The results showed that the measurements using various techniques agree to within ∼ 15% present a generally consistent picture of film structure and composition.

AB - An attempt to develop an industrially straightforward gate dielectric deposition process was presented by growing HfO2 films on Si(100) using chemical vapor deposition. Sufficient oxygen was provided by the decomposition of the hafnium-tetra-tert-butoxide Hf(C4H9O)4 precursor during deposition at ∼400°C to produce a stoichiometric HfO2 film. The results showed that the measurements using various techniques agree to within ∼ 15% present a generally consistent picture of film structure and composition.

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JF - Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

IS - 2

ER -

Chemical vapor deposition of HfO₂ films on Si(100)

Abstract

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